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241. At the end, we could use the spec which determined by matlab model and verilog-A model to finish the transistor circuit design.

242. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by relative low-temperature sublimation or solution-phase deposition onto a substrate.

243. Transistor thermal spectrum, as a new method, different from the commonly infrared thermogram, is introduced to characterize the non-uniform property of the junction temperature distribution.

244. Cadmium sulphide or cadmium selenide in polymer based thin film transistor.

245. The characteristic of power switch of bipolar junction transistor(BJT) and the wireless receiving and sending technique are used to carry out the property of low cost and convenient to carry.

246. Experimenting repeatedly, by our limited equipments we provided the qualified photomask for the study of 3DG460 microwave low-noise transistor.

247. So silicon nanowires exhibit excellent application promising in nanoscale electron devices such as field effect transistor and memory cell.

248. A trench DMOS transistor structure is provided that includes at least three individual trench DMOS transistor cells formed on a substrate of a first conductivity type.

249. Therefore, engineers must evaluate transistor characteristics as quickly as possible after the stress is removed.

250. The power source used 14 power file effect transistor MOSFET in power transformer second order; all the combinations of twist-coil could construct 18 different second orders.

251. The relative sensitivity of the sector split-drain field-effect transistor is studied by two methods:1. Numerical simulation.

252. This paper deals with period doubling, period- adding and chaotic behavier in the unijunction transistor second order circuit. The mechanism of bifurcation and chaos is discussed.

253. Thermal failure of a type of microwave power transistor was analyzed and discussed, the power aging failure happened in the process of screening test.

254. The unbiased Darlington transistor was utilized to avoid crossover distortion and to improve power output for homing transmitting system.

255. These tiny mirrors can be tilted electrostatically, using a voltage applied by a thin-film transistor of the sort employed to control liquid-crystal pixels.

256. TI introduces the silicon - based transistor which soon eclipsed germanium devices in production volume.

257. High - power transistor drive is not affected by high frequencies.

257. Sentencedict.com try its best to collect and make good sentences.

258. Switching time of the new type transistor is shortened three times.

259. A bootstrapped switch with dummy transistor is used to reduce the signal-dependent charge injection and clock feedthrough.

260. A new ultra-wideband(UWB) Gaussian pulse generator composed of a step recovery diode(SRD), a field-effect transistor(FET) and a Schottky diode was developed.

261. Depletion Model Selective doped heterojunction transistor is designed and fabricated.

262. Double pole transistor in power device is major and the apply of IGBT will be more and more.

263. It is pointed out that there are some questions determining configuration of single transistor amplifier, the general method and common circuit are given.

264. To create an reset input to the supervisory chip, its input must receive an active-low ground signal, requiring transistor Q1 to turn on.

265. The collector voltage of the switching transistor is determined by the voltage of the power network.

266. The A1210-A1214 Hall-effect latches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor.

267. The switching time of this new transistor reduced three times.

268. For example, the scan line and the gate terminal of the driving transistor are connected through a rectifying element.

269. A low dielectric material, acrylate resin has been investigated as a passivation dielectric layer for thin-film transistor (TFT) arrays in this paper.

270. SOI technology is used to reduce the device capacitance and increase transistor performance.