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181. Phase-shifted FB-ZVZCS-PWM converter solves the problem mentioned above, and insulated gate bipolar transistor(IGBT) is fit for the lag-arm.

182. This paper presents a new circuit model for designing a microwave transistor amplifier, and gives a general optimum programing.

183. For the next couple of decades advances in transistor technology drove the industry, as several companies jumped on the idea and set out to develop commercially viable versions of the device.

184. The subject of the invention is to raise the two-dimensional electron density and electron mobility of high electron mobility transistor of gallium nitride without generating short channelling effect.

185. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.

186. This paper discusses the working principle of bipolar transistor avalanche, and analyzes the circuit of ultra-wideband very narrow pulse generator adopting cascade bipolar transistor structure.

187. The field effect transistor is probably simplest three terminal active devices in current use.

188. A transistor memory cell can be made with any number of terminals.

189. The region in a transistor between the emitter and the collector.

190. For medium and small-power transistor die and the tube socket of adhesive, and adhesive components such as hybrid circuits.

191. The process is compatible to the existing double poly-silicon self-aligned NPN transistor process, which can be used to fabricate high-performance complementary bipolar circuits.

192. An insulated gate bipolar transistor (IGBT) device characterization tool allows users to quickly and accurately create average and dynamic models of power semiconductor devices.

193. The metal-oxide-semiconductor field-effect transistor (MOSFET) is the dominant device used in ultra-large-scale integrated (ULSI) circuits.

194. The different trigger points of LDMOS's intrinsic npn transistor by isothermal and non-isothermal methods are compared and analyzed.

195. An assistant 380V AC-input and multi-output switching power supply is introduced which is used in thick-film driving circuits for large-power IGBT(Insulated Gate Bipolar Transistor).

196. With regard to solid-state microwave power transistor operating in class C, reducing the operation voltage is an efficient means to improve the transistor reliability.

197. The effect of circuit parameters of avalanche transistor sweep generators on the sawtooth waveforms is discussed. To improve the sweep linearity,(sentencedict.com/transistor.html) the bootstrap circuit is applied.

198. Similarly, the drawings representing the structures used to form the transistor logic gates and interconnects were done by hand.

199. The problem of closed-loop stability of logarithmic converters employing a bipolar transistor as logarithmic feedback element is discussed.

200. The high-speed digital frequency mixer made of medium-scale integrated circuits and the design of a high power transistor amplifier are also presented.

201. A transistor is grounded not connected to GND without connection, thereby simplifying the replacement of data in the memory cell.

202. The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.

203. By employing low dropout PMOS adjusting transistor and U pattern layout design methodology, the large current and over heat problem have been solved.

204. You can use a cheap NPN transistor such as a 2N2222 to amplify this pulse, to interface with the next stage of electronics.

205. In order to further simplify the configuration of CMOS circuits, the technique of switch sharing, which can realize sharing MOS transistor or MOS net among circuits is investigated.

206. A design flow is built, from the design of behavioral stage , transistor stage and analytic procedure.

207. By employing the standard microfabrication techniques used, for instance, in manufacturing of computer chips, the team has created a type of field-effect transistor, a vital computer component.

208. Further a sensor system comprising such a field-effect transistor and the use of a sensor system for detecting molecules is disclosed.

209. In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.

210. An analysis of ionizing-radiation effects on NMOSFET with lateral parasitic transistor was studied by a two dimensional numerical simulation.