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121. A coaxial diode was test which was designed for MILO. Its emission characteristic and input power of external-wave were studied and analyzed at different voltages.

122. Its key idea is that integration of GTO with improved structure, antiparallel freewheeling diode and gate drive circuit, then connects its gate drive by low inductance.

123. The zener diode coordinate translator and its designing principle are expounded by taking the metering of RPM of 4125A engine fore...

124. The topology consists of multiple single - phase diode - clamp 5 - level units in series to synthesize more levels output.

125. The prepulse will result in forming plasma, and further affect the diode performance. To remove or reduce this effect, a crowbar tube with cold cathode was adopted in the accelerator.

126. In this method, the capacitance of the varactor diode is changed by voltage.

127. Small signal switching diode. Reverse voltage 50 V. Average rectified current 150 mA.

128. The schottky diode bypasses the gate resistor in the gate discharge path, so that there is no falling edge delay. The delay at the rising edge adds dead time.

129. In order to study the transient performance of the vortex diode pump, the large eddy simulation (LES) was employed to simulate the transient flow pattern in the pump.

130. It has been proved that the value of the voltage drop can be achieved through the extrapolation of the forward current voltage curve when the current through the Schottky barrier diode reach 40A.

131. The first and second diode units cooperate to effect current flow between the input locus and the respective power rail during a predetermined operational condition of the apparatus.

132. The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

133. In this paper, the probability for adjusting silicon fast recovery diode soft factors and softness by selecting proper recombination center in process is analyzed.

134. An analytical model for the injection, transport a nd recombination of carriers in bilayer organic light-emitting diode was presented.

135. Thirdly, we research that as the different of injection laser power, diode laser induced instability and appeared chaos in theory.

136. Q-switch erbium glass lasers have important application in eye-safe laser range finder. laser diode (LD) side-pumped erbium glass laser electro-optic Q-switch experiment is reported in this paper.

137. Methods In the first experiment, 48 rabbits were inflicted with a posterior subglottic injury using a diode laser, and there were 10 unwounded controls.

138. The influence of the impedence mismatching between the joint section in pulse forming line and the helical line on the voltage waveform of the diode was analyzed.

139. The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.

140. The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.

141. Using ISD1420 series integrated phonetic circuit to produce sound and infrared diode on-off switch to simulate the beating process,[http://sentencedict.com/diode.html] a drum without drumhead is invented.

142. With high photoelectric rate. The diode side-pump laser source is good stability and long life time.

143. Silicon epitaxial planar switching diode. Reverse voltage 35 V. Average forward current 150 mA.

144. A heterodyne interference is caused by a frequency modulation of a laser diode (LD) with a ramp injection current, and a linear phase detection is realized.

145. Surface mount switching diode. Power 350 mW. Reverse voltage 75 V. Rectified current 150 mA.

146. Output voltage is directly sensed by optocoupler U2 and Zener diode VR2.

147. Semiconductor illume, pass nitride namely base glow diode light source of LED production lighting.

148. The pulse measurement is to detect pulses and pulseless . The sensor is infrared receiving diode and infrared emission diode.

149. Fast recovery diode module for high speed rectifier, free-wheeling diode, arc-welder applications.

150. The method is worked out to determine the Boltzmann constant accurately with the aid of the I-V characteristic of the transistor diode.