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31 The first is a silicon nitride window sandwich ( picture below ).

32 The feasibility is expounded of prod using chromium nitride with material chromium powders by solidifying pro - cess.

33 Inorganic: aluminum nitride, zirconia, potassium fluoride, bentonite, kaolin, barium sulfate, lead sulfate, sodium aluminum, chromium oxide, titanium dioxide.

34 Our company is a joint-stock company operated under the modern corporation system. We have a production line of organic chloride, silicide, nitride compounds and etc.

35 The researchers placed a silicon nitride waveguide on a transparent nanoporous silicon oxide substrate that they specially developed to have a much lower refractive index than that of the waveguide.

36 Boron carbon nitride ( BCN ) thin films were deposited by radio frequency ( RF ) magnetron sputtering .

37 This article is about how to use Electron Cyclotron Resonance Chemical Vapor Deposition(ECRCVD) method to prepare amorphous silicon nitride(SiN_x)film.

38 The picokeystone is trapped between the two silicon nitride windows.

39 However, increasing operating frequencies and bandwidths will open the doors for compound semiconductor technologies such as gallium arsenide and gallium nitride.

40 Effects of titanium carbide, nitride and sulfide on the microstructure and properties of HSLA steel were discussed.

41 Titanium nitride was synthesized by ammonia reduction and nitridation under flowing ammonia atmosphere while the content and tetragonal phase structure of zirconia was unchanged.

42 In the present embodiment, the interelectrode insulating film 8 is formed of a silicon oxide film or a silicon nitride film having a thickness of 400 nm or below.

43 Jelenski, A . " Gallium Nitride - New Material for Microwave and Optoelectronics . "

44 Currently, the direct nitridation of silicon is the most prevalentpreparation method of silicon nitride.

45 The invention relates to a nitridation sintered aluminum titanate-silicon nitride composite material and preparation method thereof, belonging to the ceramic material field.

46 Some types of oxynitride glass concerned with silicon nitride are studied in the present paper.

47 A double-deck plasma enhanced chemical vapor deposition (PECVD) facility was used to prepare silicon nitride film on the finely polished (100) plane ofp-type single crystal silicon wafer.

48 The subject of the invention is to raise the two-dimensional electron density and electron mobility of high electron mobility transistor of gallium nitride without generating short channelling effect.

49 Shock behavior of silicon nitride ceramic was investigated by using a one - stage light gas gun facility.

50 Nanometer tungsten nitride powders were synthesized as amm onium metatungstate by means of spray drying, calcination, milling and nitration in pure ammonia.

51 Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

52 All candidates are now mounted between silicon nitride windows by default.

53 The Raman scattering intensity of single wall boron nitride nanotubes is studied based on non-resonant bond polarizability model. Sentencedict.com

54 The surface layer obtained was composed of the bcc nitride of tantalum instead of orthorhombic oxide.

55 The preparation of aluminium nitride powder by means of direct nitridation under pressurized nitrogen atmosphere and carbothermal nitridation of alumina is studied.

56 Aerobic bacteria chew up the ammonia and turn it first into nitride and then to nitrate.

57 This paper concerns photo-CVD silicon nitride film including the deposition mechanism, equipment and the growth process.

58 Semiconductor illume, pass nitride namely base glow diode light source of LED production lighting.

59 The deposited film has the similar index of refraction and the similar etch ratio in diluted HF to the normal silicon nitride film, and almost has no stress damage to the G...

60 We studied the relationship between the RF power, the chamber pressure and the film stress for deposited the silicon nitride film by Plasma Enhance Chemical Vapor Deposition(PECVD).