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1. Photoetching polysilicon forms force sensitive resistance bar.

2. Reoxidation of the polysilicon sidewall prior to silicon nitride spacer formation exacerbates the undercut.

3. Two compensation Methods : With polysilicon thermal resistor are analyzed and tested particularly.

4. Encourage development of polysilicon and further of SPV materials and matching new energy storage cell, aerolite, high titanium slag, titanium sponge and titanium materials.

5. Polysilicon moved from shortage to glut flick a light switch.

6. The polysilicon industry in China is in rapid growth and polysilicon plant engineering market is in the ascendant.

7. The heavily-doped - polysilicon - oxidation process condition used in LDD IC was optimized.

8. The invention relates to the field of polysilicon production, in particular to a method for treating secondary trichlorosilane in an improved Siemens method.

9. Compared to polysilicon, thin film solar cell conversion rate higher, but also more environmentally friendly.

10. A CMOS device with polysilicon protection tiles is shown in Figure 2.

11. The polysilicon micro - cantilever is a basic structure in MEMS.

12. The invention provides a system for separating and purifying trichlorosilane in production process of polysilicon and an operation method thereof.

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13. Some fraction of memory cells or transistors in a vertical microcircuit will happen to straddle a boundary between polysilicon grains and will possibly fail as a result.

14. Silicon Powder can be made into trichlorosilane, which is the main raw material of polysilicon.

15. Silicon core carrier is needed by the equipment to produce polysilicon.

16. For many generations, the most significant part of the EOT scaling problem was the depletion capacitance of polysilicon gates.

17. March's earthquake and tsunami in Japan, for example, waylaid companies that relied on components made of polysilicon.

18. Other top five sectors are cement, plate glass, coal chemical industry, polysilicon and wind power equipment.

19. The invention relates to a method for preparing trichlorosilane from tetrachlorosilane, belonging to the field of polysilicon production.

20. Ron Reis, REC Silicon's VP of technology, laid out the reasons why FBR was chosen as the successor to the ol' Siemens polysilicon warhorse.

21. The carrier transport and conductivity mechanism in the grain boundary (GB) of polysilicon were studied, the new models about the structure and the potential barrier distribution in GB were presented.

22. The present invention can reduce the hot electron effect in low-temperature polysilicon film transistor effectively and raise the stability of low-temperature polysilicon film transistor obviously.

23. An experiment was conducted to study the high-temperature annealing characteristics of polysilicon films using atomic force microscope, secondary ion mass spectroscopy and probe.

24. In this study, through the impurity distribution, organization and resistivity analysis, it evaluates the directional solidification purification effect on the polysilicon in the round.

25. Measured results for the tablets show that because of the role played by the polysilicon films, the turn-on properties of the thin emitter thyristors are not affected by the very thin emitter region.