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31. It is noted that there is a thin fluid film between the loaded asperities and the wafer being polished in CMP process, thereby a flow system with nano scale film is formed in.

32. They can be classified into wafer level, chip level, and package level stacking.

33. Another is a ceramic dielectric waveguide covered by a silicon wafer with high resistivity.

34. Then, from the balance point of the two phases, a new model, which can quantitatively describes the generation rate of oxidized layer on wafer surface in CMP is developed.

35. By the steps, the position of the chip at the wafer is determined according to the label on the chip, thus determining the mass of the whole wafer.

36. Ensure real closing - tube diffusion on wafer inside quartz tube.

37. The sub-threshold current test, which is often done at the wafer level, is a measure of how quickly the device will turn on and off.

38. A silicon wafer bonding technology and its application to new dielectric isolation combined with conventional V-shaped grooves are described.

39. It is the best ideal equipment to trial-produce or produce in small batch to suppress various kinds of particles form grain to wafer and abnormity .

40. The differential microphone is formed using silicon fabrication techniques applied only to a single, front face of a silicon wafer.

41. Anisotropically conductive connector, probe material member, wafer inspection apparatus, and wafer inspection method.

42. The method is to coat a wafer of silicon with a protective layer of silicon dioxide.

43. Adsorption state varied from physisorption to chemisorption and linkage with wafer finally along with time.

44. All valves should have flanged connections. Flangeless, wafer or lugged flange style control valves shall not be used.

45. Embodiments of the disclosure include use as a wafer level underfill, and an encapsulant for electronic chips.

46. Single - wafer processes use higher pressures than the batch processes.

47. In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results.

48. The wafer is a piezoelectric resonator, expanding and contracting in response to electrical voltages at a precise, extremely high frequency.

49. To make production plan according to customer requirement and Wafer Manufacturing capacity.

50. Schottky Barrier Diode Wafer 40 Mils, 150 Volt, 1 Amp.

50. Sentencedict.com is a online sentence dictionary, on which you can find excellent sentences for a large number of words.

51. The experiment of fully automatic reactive ion etching on 3 inch GaAs wafer is described.

52. Mechanical Test Wafer - A silicon wafer used for testing purposes.

53. Attribute to SOI wafer and deep reactive ion etching technology used, the fabrication process of the sensor is easy to control.

54. Water for electronic industry use: the wash water of electronic components, such as: integrate circuit, silicon wafer, display tube, electrode tube, and circuitry tube, etc.

55. In the vacuum holding module of wafer, the vacuum monitoring circuit is designed in order to collect and monitor the vacuum pressure in real-time.

56. Wafer, on the other hand , is the classic NBA enigma.

57. But integrating a novel memory process together with a logic process on a single wafer without compromising one or the other could be difficult.

58. Like a crossing guard, the wafer sends the cells in different directions.

59. In order to reduce the thermal conductivity and heating capacity and increase the detectivity of array, the suspended structure was formed on silicon wafer by chemical etching of KOH.

60. This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.