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31. Silicon epitaxial planar switching diode. Reverse voltage 20 V. Forward current 100 mA.

32. Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.

33. There are three procedures in LED production, namely epitaxial wafer, tube core and encapsulation.

34. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type.

35. By utilizing the method, the doping concentration of the epitaxial layer is regulated to increase the widening of the depletion region so as to further improve the photon absorption efficiency.

36. The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.

37. The epitaxial growth is not found between(Ti, Al)N coating and substrate.

38. The results show that(1) An epitaxial film can maintain dislocation-free if its surface maintain flat at atomic scale, even when it is tens times thicker than its critical thickness.

39. Variation methods of in - situ real time optical monitoring of thin film layer - by - layer epitaxial growth are presented.

40. Because epitaxial growth is not a balance process, kinetic feature is the most important factor which can control the structure's formulation during the epitaxial growth.

41. Silicon epitaxial planar switching diode. Reverse voltage 35 V. Average forward current 150 mA.

42. Nucleation and growth behavior of two dimensional islands in early stage of surfactant-mediated epitaxial growth have been studied by Kinetic Monte Carlo ( KMC ) simulation.

43. NPN silicon darlington power transistor. Complementary epitaxial base transistors in monolithic darlington circuit for audio output stages and general amplifier and switching applications.

44. Epitaxial growth steps and growth spirals were observed from epitaxial film appearance photograph.

45. And on the basis of device on-resistance study, we optimized the main factors of power VDMOS cellular on-resistance, such as poly width and the impurity concentration of epitaxial layer.

46. The doping profile of the epitaxial film has been measured by means of two-point probe spreading resistance technique.

47. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

48. Epitaxial process and factors affecting property of the material were discussed.

49. Homogeneous , strained epitaxial SiGe films on silicon substrates were used.

50. The dislocation density of an epitaxial layer is reduced and is distributed homogeneously, and the usability of the thick-film is greatly improved.

51. It also explains the epitaxial growth determined by the capital and labor input as well as the internal growth, and estimates the effect of the allocation of resources.

52. Epitaxial growth of LBD and laser on single crystal silicon film quartz substrate or single crystal silicon film quartz substrate deposited buffer layer.

53. This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.

54. For the parameter of the epitaxial layer, putting forward a series of measures that let up or repress deposition and self-doping when the epilayer processing,[http://sentencedict.com/epitaxial.html] improve the epilayer quality.

55. Experiments show that the epitaxial growth structure could be used in the preparation of APD devices.

56. In addition, the ALH 84001 magnetites exhibit epitaxial growth relationships with the host carbonate, and are therefore unlikely to have formed within the cells of bacteria (Bradley et al. 1998).

57. The C-V characteristic of the electronic timing varactor depends on the distribution of epitaxial impurity density.

58. A molecular dynamics simulation of the enhancement of adatom incidence of formation of misfit dislocations in epitaxial aluminum films has been carried out.

59. Single wafer silicon epitaxial CVD equipment has very good thickness a nd resistivity uniformity.